Bahagi No.：BLF647PMTagagawa：AmpleonCategory：200W Broadband LDMOS RF Power Transistor, HF hanggang 1500 MHz Mga Detalye ng Frequency Range: 0 ～ 1500 MHz (HF～UHF) Output Power: 200 W (CW/Bulsed) d. (Typ.) Supply Voltage: 32 V DC (Typ.) Drain-Source Voltage (Vds): 65 V Drain Efficiency: 70% (Typ. @ 1300 MHz) Quiescent Current (Iq): 200 mA (Typ.) Package: SOT-1121A (f.Mal Resistanceed) (f) Ther. K/W Operating Temperature: -65 ℃ ～ +225 ℃ (Junction) Teknolohiya: LDMOS (N-channel enhancement) Compliance: RoHS Compliant, Lead-Free Features Broadband High Power: 200W from HF to 1.5 GHz, ideal for multi-band unified design High Gain & Efficiency: 170% typical na pakinabang: binabawasan ang badyet ng init at kuryente Napakahusay na Kagaspangan: Pinahihintulutan ang matinding hindi pagkakatugma ng pagkarga; perpekto para sa pang-industriya/broadcast na high-reliability na mga application Pinagsamang Proteksyon ng ESD: Pinapasimple ang disenyo ng ESD, pinapabuti ang ani ng produksyon Madaling Kontrol at Katatagan: Isang 32V na supply, simpleng kontrol ng kuryente; mababang Ciss=78pF, Crss=1.3pF para sa magandang high-frequency stability Mga Application Mga broadcast transmitter (FM/TV, digital broadcasting) Industrial RF heating, plasma at laser driving supplies Mga base station/PMR ng komunikasyon: VHF/UHF high-power amplifier Siyentipiko/medikal: high-energy RF sources, pulsed power amplification