GaN HEMT CLL3H0914L-700U AlGaN

Mga Pangunahing Detalye (Tcase=25°C, VDS=50V, pulse tp=100μs, δ=10%, class‑AB)

• Saklaw ng Dalas：0.9 GHz ~ 1.4 GHz (L‑band)
• Drain Supply Voltage (VDS):50 V (Typ.), Max 150 VAmpleon
• Quiescent Current (IDq):500 mA (Typ.)Ampleon
• Saturated Output Power (PL(sat)):700–800 W (58.5–59.0 dBm)Ampleon
• Power Gain (Gp):16 dB (Typ.)Ampleon
• Drain Efficiency (ηD):62–71 % (Typ., 1.2–1.4 GHz)Ampleon
• Pagkawala ng Pagbabalik ng Input (RLin):−10 ~ −16 dB (Typ.)Ampleon
• Package：SOT502A (flanged ceramic, 2 lead, mataas na thermal dissipation)Ampleon
• Thermal Resistance (Junction to Case)：Steady state 0.38 K/W；Pulse (3ms) 0.24 K/WAmpleon
• Mga Tampok：Internal na pre-matching + stability network, proteksyon ng ESD, mataas na mismatch tolerance, mataas na kahusayan, mababang thermal resistanceAmpleon.

Mga Pangunahing Tampok

• 3rd‑gen GaN‑SiC：Mataas na densidad ng kuryente, mataas na kahusayan, mataas na temperatura ng junction (225°C), higit sa pagganap sa LDMOS；
• 0.9–1.4 GHz ultra‑wideband：L‑band radar (960/1030/1090/1215 MHz), aerospace, ECM；
• Panloob na paunang pagtutugma + katatagan：Pasimplehin ang panlabas na pagtutugma, paikliin ang ikot ng disenyo, katatagan ng broadband;
• Mataas na ruggedness：Mismatch tolerant, pulse spike resistant, angkop para sa mahaba/maikling pagpapatakbo ng pulso;
• Flanged ceramic package：Ultra‑low thermal resistance, mahusay na pagwawaldas ng init, mataas na pagiging maaasahan para sa pangmatagalang high‑power na operasyon；
• Sumusunod sa RoHS:Lead-free, eco-friendly.

Mga Karaniwang Aplikasyon

• L‑band pulse radar high‑power final amplifier (700W class, 960–1215 MHz)；
• Aerospace 1030 MHz transponder / DME transmitter；
• Electronic Countermeasures (ECM), broadband high‑power jammers；
• Industrial, Scientific, Medical (ISM) high-frequency high-power sources；
• Pagpapalit para sa legacy na LDMOS (hal., BLL9G1214L-600), pinahusay na kahusayan at density ng kuryente.

Depinisyon ng Numero ng Bahagi

• CLL：C‑band/L‑band, GaN HEMT, power transistor
• 3:3rd-generation na proseso ng GaN
• H0914：0.9–1.4 GHz frequency band
• L：L‑band, karaniwang flanged na pakete
• 700：700W power rating (saturated output)