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Bahay> Mga Produkto> RF Power Transistor> HF / VHF Power LDMOS> BLF974P BLF974PU High Power LDMOS
BLF974P BLF974PU High Power LDMOS
BLF974P BLF974PU High Power LDMOS
BLF974P BLF974PU High Power LDMOS
BLF974P BLF974PU High Power LDMOS
BLF974P BLF974PU High Power LDMOS
BLF974P BLF974PU High Power LDMOS
BLF974P BLF974PU High Power LDMOS

BLF974P BLF974PU High Power LDMOS

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Model No.BLF974P BLF974PU

BrandAMPLEON

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Paglalarawan ng Produkto
BLF974P, Ampleon, 500W HF/VHF Broadband LDMOS RF Power Transistor, 50V Advanced na Teknolohiya ng LDMOS, 10kHz-700MHz Ultra-Wide Frequency Coverage, Broadcast/Industrial/Scientific/Medical (ISM) Dedicated High-Power High Power Component at MRFitch Protection na may ESD Butch Protection Pagpapahintulot, TO-270-2G-1 (SOT539A) Metal-Ceramic Package High-Power Transistor
10kHz~700MHz (Ultra-Wideband Coverage ng HF/VHF Bands), Sumasaklaw sa 225/450/500MHz Industrial/Broadcast Frequencies, Broadcast Transmission System Dedicated Bands, ISM (Industrial/Scientific/Medical) Band Applications, Aerospace Communication System, Mga Sistema ng Komunikasyon sa Aerospace na Aplikasyon, Propesyonal na Radiocarrier Communication na angkop sa Broad para sa CW/Pulsed Signal Amplification
Average na Output Power: 500W (Karaniwang, CW Signal, 225MHz); Peak Output Power: 600W+ (Karaniwang, 3dB Gain Compression); Boltahe ng Supply: 50V Standard; Power Gain: 25.7dB (Karaniwang, 225MHz, 500W Output); Kahusayan ng Drain: 76% (Karaniwang, 225MHz, 500W Output); V(BR)DSS: 108V (Max); Extreme VSWR Ruggedness (Withstands 40:1 All Phase); Pagkawala ng Pagbabalik ng Input: -12dB (Karaniwang); VGS(th): 1.5~2.5V (Karaniwang); IDSS: 1.4μA (Karaniwang); Built-in na Proteksyon ng ESD (HBM 2kV); Disenyo ng Mababang Thermal Resistance (0.15 ℃/W Tipikal); Malawak na Dynamic Range Power Control Capability; Napakahusay na Linearity para sa Multi-carrier na Application
Advanced na Proseso ng 50V LDMOS, 1-Stage High-Power Amplifier Architecture, High Power Density Design (500W Output na may Single Device), Napakahusay na Thermal Stability at Conductivity, RoHS 3.0 Compliant, Industrial Grade Durability Design, Na-optimize para sa Continuous Wave (CW) Operation, Long-life High Reliability (MTde⁵BF>1 Operation High Reliability) (-40℃~+85℃), Low Parasitic Design Nagpapabuti ng High-Frequency Performance, Built-in na Temperature Compensation Circuit na Pinapaganda ang Stability, Na-optimize na Output Capacitance para sa Easy System Integration, Independent Gate/Drain Control Pins para sa Easy System Integration, High Gain Design na Pinapasimple ang Amplifier Cascading, Easy Power Control na mga System (Awtomatikong Power Control na Cascading)
Package: TO-270-2G-1 (SOT539A) Metal-Ceramic Package; 5-Pin Metal-Ceramic Package, Source Connected to Mounting Flange, Low Thermal Resistance Design (0.15℃/W Typical), Industry Standard Dimensions (19.0×19.0×7.5mm), Tray Packaging (10 Pieces/Tray, Dry Pack), Angkop para sa High Power Thermal System Integration, Grounds para sa High Power na Thermal System Integration, Compatible sa Exhanced na Prosesong Pag-assemble Reliability Package Design para sa Communication Infrastructure Applications, Metal-Ceramic Construction na Nagpapabuti sa Thermal Conductivity at Mechanical Strength
HF/VHF Broadcast Transmitter Power Amplifier, Industrial Heating/Plasma Applications, Scientific Research Instrument RF Sources, Medical Equipment RF Power Modules, Aerospace Communication System, Propesyonal na Radio Communication Base Stations, Long-distance Communication System, RF Test Instrumentation, ISM Band High-Power Equipment, Radar System Auxiliary na Kagamitan sa Komunikasyon sa TV Ground Signal. Multi-carrier Broadband Communication System, High-Power CW Signal Generators
Bahay> Mga Produkto> RF Power Transistor> HF / VHF Power LDMOS> BLF974P BLF974PU High Power LDMOS
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