BLP9H10S-500AWT RF MOSFET LDMOS 300 MV OMP780

1. Mga Pangunahing Detalye

• Tagagawa: Ampleon
• Teknolohiya: 9th Generation LDMOS
• Package: OMP-780-6F-1 (overmolded plastic earless flanged, 6-lead, mataas na thermal dissipation)
• Saklaw ng Dalas: 600 MHz – 960 MHz (saklaw sa 4G/5G: n5/n20/n28, Band 8/20/28)
• Supply Voltage: VDS = 48 V (typical), VDSmax = 105 V
• Output Power (P3dB): 500 W @800 MHz, 48 V, 20 MHz LTE
• Power Gain: 18.3 dB (typical) @800 MHz
• Efficiency ng Drain: 51% (typical) @800 MHz (Doherty mode)
• Impedance: Integrated wideband pre-matching, 50Ω system compatible
• Tahimik na Kasalukuyang: Idq = 125 mA (karaniwan)
• Thermal Resistance (junction sa case): 0.45 K/W
• VSWR Ruggedness: 10:1 (lahat ng phase, full power, walang damage)
• Proteksyon: Pinagsamang dual-sided na proteksyon ng ESD, mababang memory effect (DPD-friendly), RoHS compliant
• Suffix: AWT = A (Asymmetric Doherty) + W (Wideband) + T (Tape at Reel)

2. Mga Pangunahing Tampok

1. Asymmetric Doherty Optimization: Pinagsamang carrier/peaking transistors on-chip; ang asymmetric na disenyo ay nagpapahusay ng kahusayan at linearity para sa mga high-PAR (9.9dB) na signal.
2. High Efficiency & Gain: 51% na tipikal na kahusayan at 18.3dB na nakuha, binabawasan ang pagkonsumo ng kuryente ng system at mga kinakailangan sa pre-drive, pinapagaan ang thermal design.
3. Wideband Coverage at DPD-Friendly: 600–960MHz single-device coverage, mababang output capacitance, mababang memory effect, perpekto para sa multi-carrier/wideband 5G NR signal.
4. High Ruggedness at Thermal Performance: 10:1 VSWR tolerance, dual-sided ESD protection, OMP flanged package (Rth=0.45K/W), na angkop para sa high-power, long-duration na pagpapatakbo ng macro base station.
5. Madaling Pagsasama: Pinapasimple ng pinagsamang wideband input/output na pagtutugma ang panlabas na circuitry at pinapaikli ang mga ikot ng disenyo.

3. Mga Karaniwang Aplikasyon

• 4G/5G Macro Base Station Final-Stage Amplifier: 600–960MHz (n5/n20/n28) RRU/AAU transmit channels.
• Mga Multi-Carrier RF Power Module: 20MHz/40MHz/80MHz wideband LTE/NR signal amplification.
• Doherty Amplifier Systems: Asymmetric na arkitektura para sa mga high-PAR signal, pagpapabuti ng linearity at kahusayan ng system.
• Pampublikong Kaligtasan / Pribadong Network Transmitter: High-power, high-stability VHF/UHF transmit equipment.

4. Pagkakasira ng Pangalan ng Numero ng Bahagi

• BLP: Broadband LDMOS Power
• 9: Proseso ng LDMOS Ika-9 na Henerasyon
• H: High Gain / High Efficiency Grade
• 10: 48V Voltage Class Platform
• S: Pamantayan na Marka ng Pagganap
• 500: 500 W Patuloy na Wave Output Power (P3dB)
• AWT: A (Asymmetric Doherty) + W (Wideband) + T (Tape at Reel)