RF MOSFET Transistors BLM9D2327S-50PBG
Get Latest Price| Min. Order: | 1 |
Model No.: BLM9D2327S-50PB BLM9D2327S-50PBG
Brand: AMPLEON
The file is encrypted. Please fill in the following information to continue accessing it
| Parameter | Specification |
|---|---|
| Frequency Range | 2300 MHz ~ 2700 MHz (Fully covers 5G NR n78 core band and 4G mainstream bands) |
| Peak Output Power | 50W Continuous Wave (CW), in Asymmetric Doherty Configuration (47.0dBm typical) |
| Typical Power Gain | 29.0 dB (Doherty operation mode, up to 29.3dB at 2700MHz) |
| Typical Drain Efficiency | 45% (at 8.5dB OBO, 1-carrier LTE 20MHz signal) |
| Supply Voltage | 28V nominal, Maximum Rated Voltage 65V |
| Quiescent Current | 50 mA (carrier path), independent biasing for peaking path (VGSq(peak)=VGSq(carrier)-0.4V) |
| Package Type | SOT502 (OMP-780-16G-1), 16-pin surface mount package with high-efficiency thermal pad |
| Port Characteristics | Internally matched to 50Ω input, 20Ω output pre-match, simplifying external matching design |
| Architecture | Dual-section fully integrated asymmetric Doherty with built-in input splitter, output combiner, carrier and peaking amplifier paths |
| Operating Temperature | -40°C ~ +125°C (Maximum Junction Temperature 200°C) |
| Thermal Resistance | Junction-to-case thermal resistance as low as 3.5 K/W (at PL=6.25W) |
Pahayag ng Pagkapribado: Napakahalaga sa amin ng iyong privacy. Nangako ang aming kumpanya na huwag ibunyag ang iyong personal na impormasyon sa anumang paglawak sa iyong tahasang mga pahintulot.
Punan ang karagdagang impormasyon upang makapag -ugnay sa iyo nang mas mabilis
Pahayag ng Pagkapribado: Napakahalaga sa amin ng iyong privacy. Nangako ang aming kumpanya na huwag ibunyag ang iyong personal na impormasyon sa anumang paglawak sa iyong tahasang mga pahintulot.