B11G1822N60DXZ AMPLEON MMIC LDMOS

Mga Pangunahing Detalye (Tcase=25°C, VDS=28V, IDq=150mA, 20MHz LTE signal)

• Saklaw ng Dalas：1.8 GHz ~ 2.2 GHz (2G/3G/4G/5G mainstream band)
• Drain Supply Voltage (VDS):28 V (Typ.), Max 65 VAmpleon
• Quiescent Current (IDq): 150 mA (carrier/peaking, Typ.)Ampleon
• Linear Output Power (PL(AV)):60 W (47.8 dBm, 1dB compression point)Ampleon
• Power Gain (Gp): 29.8 dB (Typ.)Ampleon
• Drain Efficiency (ηD):29.5 % (Typ., sa 60W average power)Ampleon
• Pagkawala ng Pagbabalik ng Input (RLin):−15 dB (Typ.)Ampleon
• Output Impedance：20 Ω (integrated pre-matching, pinapasimple ang disenyo)Ampleon
• Package：PQFN-12x7-36-1 (36 pins, compact surface‑mount)Ampleon
• Thermal Resistance (Junction to Case)：2.1–2.45 K/W (sa 5–10W power dissipation)Ampleon
• Mga Tampok: Independiyenteng dalawahan-section, pinagsamang splitter/combiner, hiwalay na carrier/peaking bias control, integrated gate switch, ESD protection, mataas na mismatch tolerance (VSWR=10:1)Ampleon

Mga Pangunahing Tampok

• Ganap na pinagsama-samang arkitektura ng Doherty：2‑stage amplification + input splitter + output combiner + pre-matching sa isang chip, lubos na pinapasimple ang mga panlabas na circuit at pinaikli ang mga ikot ng disenyoAmpleon；
• High linearity at high gain：29.8dB gain, 60W linear power， nakakatugon sa mataas na linearity na kinakailangan ng 5G mMIMO/macro base stationAmpleon；
• Katatagan ng Broadband：1.8–2.2GHz ultra‑wideband，suporta sa multi‑mode multi‑band (W‑CDMA/LTE/5G NR) na may ±1dB gain flatnessAmpleon；
• Flexible bias control：Independent carrier/peaking bias adjustment para sa pag-optimize ng kahusayan at linearity;sinusuportahan ng pinagsamang gate switch ang TDD timing controlAmpleon；
• Mataas na ruggedness：Lalaban sa VSWR=10:1 all-phase load mismatch at broadband noise interference, tinitiyak ang pangmatagalang stable na operasyon sa ilalim ng malupit na mga kondisyonAmpleon；
• Compact package：PQFN‑36 surface‑mount，12x7mm maliit na sukat，angkop para sa high‑density PCB at miniaturized base station designsAmpleon；
• Sumusunod sa RoHS:Lead-free, eco-friendly.

Mga Karaniwang Aplikasyon

• Panghuling driver ng Macrocell base station (klase 60W, 1.8–2.2GHz)；
• 5G mMIMO aktibong antenna na nagpapadala ng channel power amplification；
• Micro/pico base station high‑linearity power modules；
• W‑CDMA/LTE/5G NR multi‑mode base stations general-purpose RF amplification；
• Pinapalitan ang mga discrete na solusyon sa driver ng LDMOS, pagpapabuti ng pagsasama at pagbabawas ng gastos sa BOM.

Depinisyon ng Numero ng Bahagi

• B11：B‑serye, LDMOS, 1.8–2.2 GHz band
• G：General purpose driver
• 1822：1800–2200 MHz frequency range
• N：Doherty MMIC, PQFN package
• 60：60W linear power rating
• D：Dual-section configuration