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Bahay> Mga Produkto> RF Power Transistor> 2-Yugto Doherty MMIC> B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC
B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC
B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC
B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC
B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC
B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC
B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC
B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC

B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC

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Model No.B10G2022N10DLZ

BrandAMPLEON

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Paglalarawan ng Produkto
2-stage Doherty MMIC
Numero ng Bahagi:B10G2022N10DL
Tagagawa: Ampleon
Uri ng Device:2‑stage 10W fully integrated Doherty MMIC (LDMOS), 2110–2170 MHz (5G n1/4G B1), small cell / mMIMO final amplifier, high‑integration high‑efficiency solutionAmpleon.

Mga Pangunahing Detalye (Tcase=25°C, VDS=28V, 1‑carrier W‑CDMA)

  • Saklaw ng Dalas:2110 MHz ~ 2170 MHz (n1/B1)
  • Voltage ng Supply ng Drain (VDS):28 V (Typ.), Max 32 V
  • Quiescent Current (IDq):22 mA (driver + final total)
  • Average na Output Power (PL(AV)):1.26 W (W‑CDMA, PAR=9.9 dB)
  • P1dB Output Power:10 W (40 dBm, Typ.)
  • Power Gain (Gp): 31.3 dB (Typ.)
  • Kahusayan ng Drain (ηD):46.6 % (Typ.)
  • Linearity (ACPR5M):-29.8 dBc (Typ.)
  • Package:7×7 mm LGA (20 pin, land grid array, surface-mount heat-mount)
  • Thermal Resistance (Junction to Case): 6.5 K/W
  • Mga Tampok:On‑chip Doherty (carrier + peaking, splitter/combiner, matching), independent bias control, ESD protection, 50Ω I/OAmpleon.

Mga Pangunahing Tampok

  • Ganap na pinagsama-samang Doherty MMIC:2‑stage, carrier/peaking, input splitter, output combiner at katugmang single‑chip integrated, zero external component, plug‑and‑playAmpleon;
  • 2110–2170 MHz tumpak na saklaw:5G NR n1 / 4G LTE B1 pandaigdigang mainstream na banda, multi‑standard na compatibleAmpleon;
  • High gain + efficiency + linearity:31.3 dB gain, 46.6 % efficiency, -29.8 dBc ACPR, small cell / mMIMO golden performanceAmpleon;
  • Independent bias control:carrier at peaking bias adjustable (VGSq(peaking)=VGSq(carrier)-0.45V), i-optimize ang Doherty efficiency/linearityAmpleon;
  • LGA high‑integration package:7×7 mm compact size, 50Ω impedance, mahusay na thermal, pasimplehin ang PCB at paikliin ang cycle ng disenyoAmpleon;
  • Built-in na ESD + mataas na ruggedness:RoHS compliant, mismatch tolerant, mataas na pagiging maaasahan.

Mga Karaniwang Aplikasyon

  • 5G NR n1 / 4G LTE B1 (2110–2170 MHz) maliit na cell / pico cell final amplifier (10W high‑linearity na mga sitwasyon);
  • Napakalaking MIMO (mMIMO) RF channel huling yugto;
  • Pribadong wireless, pampublikong kaligtasan, ISM band 10W RF transmitters;
  • Multi-carrier high-power transmitter pre-driver / driver stage.

Depinisyon ng Numero ng Bahagi

  • B10G:10W‑class, 10th‑gen LDMOS, general-purpose Doherty MMIC
  • 2022:2000–2200 MHz band (core 2110–2170 MHz)
  • N10:10W power rating (P1dB)
  • DL:Doherty LGA package
Bahay> Mga Produkto> RF Power Transistor> 2-Yugto Doherty MMIC> B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC
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