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Bahay> Mga Produkto> RF Power Transistor> 2-Yugto Doherty MMIC> BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR
BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR
BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR
BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR
BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR
BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR
BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR

BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR

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Model No.BLM8G0710S-30PBG

BrandAMPLEON

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Paglalarawan ng Produkto
Numero ng Bahagi:BLM8G0710S-30PBG
Tagagawa: Ampleon
Uri ng Device:8th‑generation LDMOS, dual-section 2-stage power MMIC, 700–1000 MHz sub‑1GHz, 30W‑class high‑linearity driver / small cell final amplifier (Gull‑wing lead version ng BLM8G0710S-30PB).

Mga Pangunahing Detalye (Tcase=25°C, VDS=28V, 1‑carrier W‑CDMA)

  • Saklaw ng Dalas:700 MHz ~ 1000 MHz
  • Voltage ng Supply ng Drain (VDS):28 V (Typ.), Max 32 V
  • Quiescent Current:I_Dq1=30 mA (driver); I_Dq2=120 mA (pangwakas)
  • Average na Output Power:3.3 W (W‑CDMA, PAR=9.9 dB)
  • P1dB Output Power:30 W (44.8 dBm, Typ.)
  • Power Gain:35 dB (Typ.)
  • Kahusayan ng Drain:51 % (Typ.)
  • Linearity (ACPR5M):-41.5 dBc (Typ.)
  • Package:SOT1271‑2 (16 lead, gull-wing, flat heat-mount type)
  • Thermal Resistance (Junction to Case): 4.5 K/W
  • Mga Tampok: On‑chip matching, mataas na dual-section isolation, temperature-compensated bias, ESD protection, Doherty‑compatible

Mga Pangunahing Tampok

  • 8th‑generation LDMOS + dual‑section 2‑stage architecture: high gain, efficiency at linearity, 2× driving capability vs. 15PB;
  • 700–1000 MHz wideband coverage para sa 4G LTE, 5G NR, 3G W‑CDMA high‑PAR signal;
  • Ang mataas na dual-section isolation (>29 dB) ay sumusuporta sa single-ended / dual-section / Doherty / push‑pull / quadrature‑combined topologies;
  • Ang on‑chip I/O na pagtutugma ay nag-aalis ng mga kumplikadong panlabas na circuit, pinapasimple ang disenyo at pinaikli ang cycle;
  • Tinitiyak ng pinagsamang temperatura‑compensated bias + independent stage bias adjust ang katatagan at binabawasan ang pagsisikap sa pag-tune;
  • Built-in na proteksyon ng ESD, sumusunod sa RoHS, mataas na pagiging maaasahan; gull-wing lead para sa madaling paghihinang ng PCB at thermal dissipation.

Mga Karaniwang Aplikasyon

  • Sub‑1GHz (700–1000 MHz) macro base station high‑linearity driver (para sa 350W/500W Doherty transistors, hal, BLC9H10XS-350A/500A);
  • 4G/5G small cell / pico cell final amplifier (30W high‑linearity scenario);
  • Pribadong wireless, pampublikong kaligtasan, ISM band 20–30W RF transmitters;
  • Multi-carrier high-power transmitter pre-driver / driver stage.

Depinisyon ng Numero ng Bahagi

  • BLM:Multi-purpose power MMIC
  • 8:8th‑generation na proseso ng LDMOS
  • G:General-purpose driver / maliit na grado ng cell
  • 0710:700–1000 MHz frequency band
  • S:Pamantayang bersyon
  • 30:30W power rating (P1dB)
  • PB:Flat heat-mount package
  • G: Gull-wing lead
Bahay> Mga Produkto> RF Power Transistor> 2-Yugto Doherty MMIC> BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR
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