Lahat ng produkto

High Performance Wideband RF Capacitor

Ang 0201BB ay isang Wideband Microwave Ceramic Capacitor 0201BB(.020"x.010") 0201BB103KW250 Broadband capacitor Mga tampok ng produkto Karaniwang saklaw ng dalas ng pagpapatakbo: 16KHz (-3cB) hanggang >32GHz Pagkawala ng pagpapasok:...

High-Performance Ultra-low ESR RF Dielectric Capacitor

Ang DLC60H ay isang Ultra Low ESR High Q RF MLCC DLC6OH Ultra-low ESR, RF/Microwave Ceramic Dielectric Capacitor Talahanayan ng Kapasidad ng DLC6OH Numero ng bahagi Uri at sukat ng dulo ng DLC60H Mga Toolbox ng Disenyo Nag-aalok ang Dalykapp ng...

Napakababang ESR, RF/MW ceramic dielectric capacitor

Ang DLC75D ay isang Ultra Low ESR High Q RF MLCC Napakababang ESR, RF/MW ceramic dielectric capacitor DLC75D(0805) Para sa pagkamit ng ultimate RF at microwave performance, ang DLC75D ultra-low ESR ceramic capacitor ang iyong tiyak na solusyon. Sa...

Napakababang ESR RF Ceramic Capacitors para sa Microwave Applications

Ang DLC75H ay isang Ultra Low ESR High Q RF MLCC Napakababang ESR, RF/Microwave Ceramic Dielectric Capacitors DLC75P(0603) Ininhinyero para sa napakababang ESR, ang DLC75P RF/microwave ceramic capacitor ay naghahatid ng walang kapantay na pagganap...

Napakababang ESR, RF/Microwave Ceramic Dielectric Capacitors

Ang DLC75H ay isang Ultra Low ESR High Q RF MLCC DLC75H Ultra-low ESR, RF/Microwave Ceramic Dielectric Capacitor DLC75H(0402) Ang DLC75H ay isang napakababang ESR RF/microwave ceramic capacitor na binuo para sa ultimate performance. Ipinagmamalaki...

Napakababang ESR, RF/Microwave Ceramic Dielectric Capacitor

Ang DLC75N ay isang Ultra Low ESR High Q RF MLCC DLC75N Ultra-low ESR, RF/Microwave Ceramic Dielectric Capacitor DLC75N(0201) Talahanayan ng Kapasidad ng DLC75N Numero ng bahagi Uri at laki ng end cap ng DLC75N Pagganap ng elektrikal Eksperimento sa...

Ultra-low ESR, microwave ceramic dielectric capacitor

Ang DLC75 ay isang Ultra Low ESR High Q RF MLCC Serye ng DLC75 Ultra-Low ESR Microwave Ceramic Dielectric Capacitors Mga tampok ng produkto Napakababang halaga ng ESR, mataas na operating boltahe, mataas na FF power, mataas na self-resonant...

B11G2327N71DYZ RF MOSFET LDMOS

Ang B11G2327N71D ay isang LDMOS 2-stage integrated Doherty MMIC Modelo: B11G2327N71DYZ (Base na Modelo: B11G2327N71D) Tagagawa: Ampleon Uri ng Produkto: LDMOS 2-Stage Integrated Doherty Monolithic Microwave Integrated Circuit (MMIC) Power Amplifier...

BLM10D1822-60ABGZ RF MOSFET LDMOS

BLM10D1822-60ABG LDMOS 2-stage na pinagsamang Doherty MMIC Ang BLM10D1822-60ABGZ ay isang 10th-generation LDMOS two-stage fully integrated Doherty MMIC by Ampleon, operating at 1800～2200 MHz. Na-optimize para sa 4G/5G macro base station at mMIMO...

C4H24F550AVZ Gallium Nitride RF Power Transistor

C4H24F550AVZ GaN Power Transistor Modelo: C4H24F550AV (Buong Numero ng Bahagi: C4H24F550AVY) Tagagawa: Ampleon Uri ng Produkto: Gallium Nitride (GaN) RF Power Transistor (Asymmetrical Doherty Architecture) Mga Pangunahing Detalye Mga Tampok at Mga...

BLP15H9S100Z BLP15H9S100 AMPLEON LDMOS

BLP15H9S100Z Power LDMOS transistor Orihinal na Ampleon 100W ultra-wideband LDMOS RF power transistor. Saklaw ng dalas: 10kHz hanggang 2GHz, full-band coverage mula HF hanggang UHFAmpleon. Na-rate na boltahe: 50V, naghahatid ng mataas na power gain...

multi-electrode type single-layer ceramic capacitor

SP series multi-electrode type single-layer ceramic capacitor Application ng Produkto Inilapat sa mga tumutugmang network, parallel resonant circuit, at pag-tune at pagsasama ng mga dielectric resonator sa mga frequency ng radyo/microwave. Mga...

BLM9D1920-08AMZ Doherty LDMOS MMIC

2-Yugto Doherty MMIC Saklaw ng Dalas 1880 hanggang 2025 Mhz 8w Average na Output Power Makakuha ng 26.8 Db Supply Voltage 28 V 1. Pangkalahatang-ideya ng Produkto Numero ng Bahagi：BLM9D1920-08AMZ Tagagawa: Ampleon Uri ng Device：GEN9 9th-generation...

RF MOSFET Transistors BLM10D1822-61ABG

RF MOSFET Transistors BLM10D1822-61ABG Frequency Band 1800 hanggang 2200 Mhz 1800to2200mhz Broadband Driver Chip Numero ng Bahagi：BLM10D1822-61ABG Tagagawa: Ampleon Uri ng Device：10th-generation LDMOS, dual-channel integrated high‑linearity power...

SS series surface mount single-layer ceramic capacitors

Single Layer Capacitor SS series surface mount single-layer ceramic capacitors Ang SS series surface mount single-layer ceramic capacitors ay gumagamit ng compact SMD structure, na nagtatampok ng ultra-low ESL, mababang insertion loss at outstanding...

Single-layer ceramic dielectric capacitor

Single Layer Capacitor SA series array-type single-layer ceramic dielectric capacitor Application ng Produkto Inilapat ito sa mga decoupling circuit, RF bypass circuit, DC-blocking circuit, atbp. sa radio frequency/microwave frequency. Mga tampok ng...

BLC9H10XS-600A RF MOSFET LDMOS

Numero ng Bahagi：BLC9H10XS-600A Tagagawa: Ampleon Uri ng Device：9th‑generation 48V LDMOS RF power transistor, asymmetric Doherty design, na may pinagsamang 50Ω input matching, na-optimize para sa sub‑1GHz 4G/5G macro base station final...

BLC9H10XS-60P RF MOSFET LDMOS 50V SOT1273

Numero ng Bahagi：BLC9H10XS-60PY Tagagawa: Ampleon Uri ng Device：9th‑generation LDMOS, simetriko 60W power transistor, 400–1000 MHz sub‑1GHz, class‑AB linear amplifier, general-purpose medium‑power final/driver stage (lead-free na bersyon ng...

RF MOSFET Transistors BLM9H0610S-60PG

Numero ng Bahagi：BLM9H0610S-60PG Tagagawa: Ampleon Uri ng Device：9th-generation high-voltage LDMOS, dual-section 2-stage power MMIC, na may on-chip matching, na-optimize para sa sub-1GHz 4G/5G macro base station driver o small cell final amplifier....

BLM2425M7S60PY LDMOS 2-stage power MMIC

Ang BLM2425M7S60P ay isang 60W LDMOS RF power transistor na inilunsad ni Ampleon. Pinagtibay ang proseso ng M7-generation RF, espesyal itong binuo para sa mga application na may mataas na lakas ng tuloy-tuloy na alon (CW) sa 2400–2500MHz (2.45GHz...

BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR

Numero ng Bahagi：BLM8G0710S-30PBG Tagagawa: Ampleon Uri ng Device：8th‑generation LDMOS, dual-section 2-stage power MMIC, 700–1000 MHz sub‑1GHz, 30W‑class high‑linearity driver / small cell final amplifier (Gull‑wing lead version ng BLM8G0710S-30PB)....

BLC9H10XS-505AZ RF MOSFET LDMOS

Numero ng Bahagi：BLC9H10XS-505AZ Tagagawa: Ampleon Uri ng Device：9th-generation 48V LDMOS RF power transistor, asymmetric Doherty design, na may pinagsamang 50Ω input matching, na-optimize para sa sub-1GHz 4G/5G macro base station final amplifier...

BLP9H10S-350A RF MOSFET LDMOS 48V

Brand at Modelo：Ampleon BLP9H10S-350A Uri ng Device：Asymmetrical Doherty, Internally Matched, N-Channel LDMOS RF Power Transistor Package：OMP780-4F-1 (7-pin ceramic na pakete, mataas na pag-aalis ng init) Saklaw ng Dalas：600 MHz ~ 960 MHz Boltahe ng...

C4H18W500A RF MOSFET 48V

Numero ng Bahagi：C4H18W500A Tagagawa: Ampleon Uri ng Device：GaN (Gallium Nitride), asymmetric Doherty power transistor, 1800–2000 MHz, 500 W peak power, na nakalaan para sa 4G/5G macro base station RF final-stage amplification. Mga Pangunahing...