Lahat ng produkto

RF MOSFET Transistors BLM10D1822-61ABG

RF MOSFET Transistors BLM10D1822-61ABG Frequency Band 1800 hanggang 2200 Mhz 1800to2200mhz Broadband Driver Chip Numero ng Bahagi：BLM10D1822-61ABG Tagagawa: Ampleon Uri ng Device：10th-generation LDMOS, dual-channel integrated high‑linearity power...

SS series surface mount single-layer ceramic capacitors

Single Layer Capacitor SS series surface mount single-layer ceramic capacitors Ang SS series surface mount single-layer ceramic capacitors ay gumagamit ng compact SMD structure, na nagtatampok ng ultra-low ESL, mababang insertion loss at outstanding...

Single-layer ceramic dielectric capacitor

Single Layer Capacitor SA series array-type single-layer ceramic dielectric capacitor Application ng Produkto Inilapat ito sa mga decoupling circuit, RF bypass circuit, DC-blocking circuit, atbp. sa radio frequency/microwave frequency. Mga tampok ng...

BLC9H10XS-600A RF MOSFET LDMOS

Numero ng Bahagi：BLC9H10XS-600A Tagagawa: Ampleon Uri ng Device：9th‑generation 48V LDMOS RF power transistor, asymmetric Doherty design, na may pinagsamang 50Ω input matching, na-optimize para sa sub‑1GHz 4G/5G macro base station final...

BLC9H10XS-60P RF MOSFET LDMOS 50V SOT1273

Numero ng Bahagi：BLC9H10XS-60PY Tagagawa: Ampleon Uri ng Device：9th‑generation LDMOS, simetriko 60W power transistor, 400–1000 MHz sub‑1GHz, class‑AB linear amplifier, general-purpose medium‑power final/driver stage (lead-free na bersyon ng...

RF MOSFET Transistors BLM9H0610S-60PG

Numero ng Bahagi：BLM9H0610S-60PG Tagagawa: Ampleon Uri ng Device：9th-generation high-voltage LDMOS, dual-section 2-stage power MMIC, na may on-chip matching, na-optimize para sa sub-1GHz 4G/5G macro base station driver o small cell final amplifier....

BLM2425M7S60PY LDMOS 2-stage power MMIC

Ang BLM2425M7S60P ay isang 60W LDMOS RF power transistor na inilunsad ni Ampleon. Pinagtibay ang proseso ng M7-generation RF, espesyal itong binuo para sa mga application na may mataas na lakas ng tuloy-tuloy na alon (CW) sa 2400–2500MHz (2.45GHz...

BLM8G0710S-30PBG RF MALIIT NA SIGNAL FIELD EFFECT TRANSISTOR

Numero ng Bahagi：BLM8G0710S-30PBG Tagagawa: Ampleon Uri ng Device：8th‑generation LDMOS, dual-section 2-stage power MMIC, 700–1000 MHz sub‑1GHz, 30W‑class high‑linearity driver / small cell final amplifier (Gull‑wing lead version ng BLM8G0710S-30PB)....

BLC9H10XS-505AZ RF MOSFET LDMOS

Numero ng Bahagi：BLC9H10XS-505AZ Tagagawa: Ampleon Uri ng Device：9th-generation 48V LDMOS RF power transistor, asymmetric Doherty design, na may pinagsamang 50Ω input matching, na-optimize para sa sub-1GHz 4G/5G macro base station final amplifier...

BLP9H10S-350A RF MOSFET LDMOS 48V

Brand at Modelo：Ampleon BLP9H10S-350A Uri ng Device：Asymmetrical Doherty, Internally Matched, N-Channel LDMOS RF Power Transistor Package：OMP780-4F-1 (7-pin ceramic na pakete, mataas na pag-aalis ng init) Saklaw ng Dalas：600 MHz ~ 960 MHz Boltahe ng...

C4H18W500A RF MOSFET 48V

Numero ng Bahagi：C4H18W500A Tagagawa: Ampleon Uri ng Device：GaN (Gallium Nitride), asymmetric Doherty power transistor, 1800–2000 MHz, 500 W peak power, na nakalaan para sa 4G/5G macro base station RF final-stage amplification. Mga Pangunahing...

BLC9H10XS-606AZ RF MOSFET LDMOS

Bilang ng Bahagi: BLC9H10XS-606A Tagagawa: Ampleon Uri ng Device: 9th-generation 48V LDMOS RF power transistor, asymmetric na disenyo ng Doherty na may pinagsamang pagtutugma ng input, na-optimize para sa sub-1GHz 4G/5G base station final power...

BLC10G22XS-570AVT RF MOSFET LDMOS 30V SOT1258

Numero ng Bahagi：BLC10G22XS-570AVT Tagagawa: Ampleon Uri ng Device：LDMOS, 30V asymmetric Doherty RF power transistor Application：Final power amplifier para sa 4G/5G macro base station AAU & RRU, 2110～2180 MHz（n1/n3/B1/B3 bands） Mga Pangunahing...

LDMOS BLC9H10XS-606AZ RF MOSFET

Bilang ng Bahagi: BLC9H10XS-606A Tagagawa: Ampleon Uri ng Device: 9th-generation 48V LDMOS RF power transistor, asymmetric na disenyo ng Doherty na may pinagsamang pagtutugma ng input, na-optimize para sa sub-1GHz 4G/5G base station final power...

AMPLEON BLC9H10XS-606AZ RF MOSFET LDMOS

Bilang ng Bahagi: BLC9H10XS-606A Tagagawa: Ampleon Uri ng Device: 9th-generation 48V LDMOS RF power transistor, asymmetric na disenyo ng Doherty na may pinagsamang pagtutugma ng input, na-optimize para sa sub-1GHz 4G/5G base station final power...

BLM9D2022-08AMZ 2stage na ganap na isinama ang Doherty LDMOS MMIC

2-Yugto Doherty MMIC LDMOS 2-stage na isinama ang Doherty MMIC Ang BLM9D2022-08AMZ ay isang 2-stage na ganap na pinagsama-samang Doherty LDMOS MMIC power amplifier mula sa Ampleon, gawa sa teknolohiyang Gen9 LDMOS, na na-optimize para sa 2110–2170...

B10G3438N55D B10G3438N55DZ RF MOSFET LDMOS

2-Yugto Doherty MMIC Modelo: B10G3438N55D Tagagawa: Ampleon Uri ng Produkto: 10th Generation 50V LDMOS 3-stage Fully Integrated Asymmetrical Doherty MMIC RF Power Amplifier, na-optimize para sa 3.4–3.8GHz band (na sumasaklaw sa 5G NR n78 core band...

BLM9D1819-08AMZ 2-stage na ganap na isinama ang Doherty MMIC

2-Yugto Doherty MMIC Numero ng Bahagi: BLM9D1819-08AMZ (tinukoy din bilang BLM9D1819-08AM; ang suffix Z ay nagpapahiwatig ng tape-and-reel packaging) Tagagawa: Ampleon Uri ng Device: 9th-generation LDMOS, 2-stage fully integrated Doherty MMIC Target...

B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC

2-stage Doherty MMIC Numero ng Bahagi：B10G2022N10DL Tagagawa: Ampleon Uri ng Device：2‑stage 10W fully integrated Doherty MMIC (LDMOS), 2110–2170 MHz (5G n1/4G B1), small cell / mMIMO final amplifier, high‑integration high‑efficiency solutionAmpleon....

BLC10G22XS-551AVT RF MOSFET LDMOS32V

Power LDMOS Transistor Ang BLC10G22XS-551AVT ay isang high-performance na LDMOS power transistor na ginawa ni Ampleon, na na-optimize para sa base station at multi-carrier na RF power amplifier application sa 2.2GHz frequency band. Nakalagay sa...

BLC10G18XS-301AVT RF MOSFET LDMOS

HF/VHF Power LDMOS Ang BLC10G18XS-301AVT ay isang 10th-generation silicon-based LDMOS RF power transistor na ginawa ng Ampleon ng Netherlands. Gumagamit ito ng asymmetric na Doherty internal matching architecture, na tumatakbo sa 1805–1880 MHz, na...

BLC10G18XS-551AVT RF MOSFET LDMOS

Power LDMOS Transistor Ang BLC10G18XS-551AVT ay isang asymmetric na Doherty LDMOS power transistor mula sa Ampleon, na na-optimize para sa 1805–1880MHz (1.8GHz) 4G/5G macro base station at multi-carrier RF power amplifier. Nakalagay sa isang pakete...

BLC10G18XS-400AVT RF MOSFET LDMOS

Power LDMOS Transistor Ang BLC10G18XS-400AVT ay isang asymmetric na Doherty LDMOS power transistor mula sa Ampleon, na na-optimize para sa 1805–1880MHz (1.8GHz) 4G/5G macro base station at multi-carrier RF power amplifier. Nakalagay sa isang...

BLC10G19XS-601AVTZ RF MOSFET LDMOS 30V

HF/VHF Power LDMOS Numero ng Bahagi：BLC10G19XS-601AVT（suffix Z/Y: BLC10G19XS-601AVTZ） Tagagawa: Ampleon Uri ng Device：LDMOS, asymmetric Doherty power transistor, 1.93–1.995 GHz, 650 W peak power, na nakatuon para sa macro base station / 5G NR RF...