Lahat ng produkto

BLC9H10XS-606AZ RF MOSFET LDMOS

Bilang ng Bahagi: BLC9H10XS-606A Tagagawa: Ampleon Uri ng Device: 9th-generation 48V LDMOS RF power transistor, asymmetric na disenyo ng Doherty na may pinagsamang pagtutugma ng input, na-optimize para sa sub-1GHz 4G/5G base station final power...

BLC10G22XS-570AVT RF MOSFET LDMOS 30V SOT1258

Numero ng Bahagi：BLC10G22XS-570AVT Tagagawa: Ampleon Uri ng Device：LDMOS, 30V asymmetric Doherty RF power transistor Application：Final power amplifier para sa 4G/5G macro base station AAU & RRU, 2110～2180 MHz（n1/n3/B1/B3 bands） Mga Pangunahing...

LDMOS BLC9H10XS-606AZ RF MOSFET

Bilang ng Bahagi: BLC9H10XS-606A Tagagawa: Ampleon Uri ng Device: 9th-generation 48V LDMOS RF power transistor, asymmetric na disenyo ng Doherty na may pinagsamang pagtutugma ng input, na-optimize para sa sub-1GHz 4G/5G base station final power...

AMPLEON BLC9H10XS-606AZ RF MOSFET LDMOS

Bilang ng Bahagi: BLC9H10XS-606A Tagagawa: Ampleon Uri ng Device: 9th-generation 48V LDMOS RF power transistor, asymmetric na disenyo ng Doherty na may pinagsamang pagtutugma ng input, na-optimize para sa sub-1GHz 4G/5G base station final power...

BLM9D2022-08AMZ 2stage na ganap na isinama ang Doherty LDMOS MMIC

2-Yugto Doherty MMIC LDMOS 2-stage na isinama ang Doherty MMIC Ang BLM9D2022-08AMZ ay isang 2-stage na ganap na pinagsama-samang Doherty LDMOS MMIC power amplifier mula sa Ampleon, gawa sa teknolohiyang Gen9 LDMOS, na na-optimize para sa 2110–2170...

B10G3438N55D B10G3438N55DZ RF MOSFET LDMOS

2-Yugto Doherty MMIC Modelo: B10G3438N55D Tagagawa: Ampleon Uri ng Produkto: 10th Generation 50V LDMOS 3-stage Fully Integrated Asymmetrical Doherty MMIC RF Power Amplifier, na-optimize para sa 3.4–3.8GHz band (na sumasaklaw sa 5G NR n78 core band...

BLM9D1819-08AMZ 2-stage na ganap na isinama ang Doherty MMIC

2-Yugto Doherty MMIC Numero ng Bahagi: BLM9D1819-08AMZ (tinukoy din bilang BLM9D1819-08AM; ang suffix Z ay nagpapahiwatig ng tape-and-reel packaging) Tagagawa: Ampleon Uri ng Device: 9th-generation LDMOS, 2-stage fully integrated Doherty MMIC Target...

AMPLEON B11G3338N81DXZ MOSFET LDMOS

2-Yugto Doherty MMIC Numero ng Bahagi：B11G3338N81D Tagagawa: Ampleon Uri ng Device：Dual‑section 3‑stage na ganap na isinama ang Doherty MMIC, gamit ang advanced na teknolohiya ng LDMOS, na na-optimize para sa 3.3–3.8GHz 5G macro/small cell driver...

B10G2022N10DLZ 2stage 10W fully integrated Doherty MMIC

2-stage Doherty MMIC Numero ng Bahagi：B10G2022N10DL Tagagawa: Ampleon Uri ng Device：2‑stage 10W fully integrated Doherty MMIC (LDMOS), 2110–2170 MHz (5G n1/4G B1), small cell / mMIMO final amplifier, high‑integration high‑efficiency solutionAmpleon....

BLC10G22XS-551AVT RF MOSFET LDMOS32V

Power LDMOS Transistor Ang BLC10G22XS-551AVT ay isang high-performance na LDMOS power transistor na ginawa ni Ampleon, na na-optimize para sa base station at multi-carrier na RF power amplifier application sa 2.2GHz frequency band. Nakalagay sa...

BLC10G18XS-301AVT RF MOSFET LDMOS

HF/VHF Power LDMOS Ang BLC10G18XS-301AVT ay isang 10th-generation silicon-based LDMOS RF power transistor na ginawa ng Ampleon ng Netherlands. Gumagamit ito ng asymmetric na Doherty internal matching architecture, na tumatakbo sa 1805–1880 MHz, na...

BLC10G18XS-551AVT RF MOSFET LDMOS

Power LDMOS Transistor Ang BLC10G18XS-551AVT ay isang asymmetric na Doherty LDMOS power transistor mula sa Ampleon, na na-optimize para sa 1805–1880MHz (1.8GHz) 4G/5G macro base station at multi-carrier RF power amplifier. Nakalagay sa isang pakete...

BLC10G18XS-400AVT RF MOSFET LDMOS

Power LDMOS Transistor Ang BLC10G18XS-400AVT ay isang asymmetric na Doherty LDMOS power transistor mula sa Ampleon, na na-optimize para sa 1805–1880MHz (1.8GHz) 4G/5G macro base station at multi-carrier RF power amplifier. Nakalagay sa isang...

BLC10G19XS-601AVTZ RF MOSFET LDMOS 30V

HF/VHF Power LDMOS Numero ng Bahagi：BLC10G19XS-601AVT（suffix Z/Y: BLC10G19XS-601AVTZ） Tagagawa: Ampleon Uri ng Device：LDMOS, asymmetric Doherty power transistor, 1.93–1.995 GHz, 650 W peak power, na nakatuon para sa macro base station / 5G NR RF...

BLC9G21LS-60AVZ RF MOSFET LDMOS

Power LDMOS Transistor Ang BLC9G21LS-60AVZ ay isang dual N-channel na LDMOS RF power transistor batay sa Gen9 LDMOS na teknolohiya ng Ampleon, na na-optimize para sa 1805–2200MHz (1.8–2.2GHz) 4G/5G base station, multi-carrier communication system,...

RF MOSFET Transistors BLC10G27XS-551AVT

Power LDMOS Transistor Modelo: BLC10G27XS-551AVT Tagagawa: Ampleon Uri ng Produkto: 10th Generation 28V LDMOS Packaged Asymmetric Doherty Power Transistor, na-optimize para sa 2.62–2.69GHz 5G NR n78 band macro base station final-stage power...

BLC10G16XS-600AVT RF MOSFET LDMOS 32V

HF/VHF POWER LDMOS Numero ng Bahagi：BLC10G16XS-600AVT Tagagawa: Ampleon Uri ng Device：LDMOS, asymmetric Doherty power transistor, 1.427–1.518 GHz, 600W class, na nakatuon para sa macro base station RF final-stage amplification. Mga Pangunahing...

BLC10G18XS-360AVT RF MOSFET LDMOS

Power LDMOS Transistor Ang BLC10G18XS-360AVT ay isang asymmetric na Doherty LDMOS RF power transistor mula sa Ampleon, na na-optimize para sa 1805–1880MHz (1.8GHz) 4G/5G macro base station at multi-carrier power amplifier. Nakalagay sa isang...

RF MOSFET Transistors BLC10G27XS-400AVTZ

Power LDMOS Transistor Modelo: BLC10G27XS-400AVT (Karaniwang Modelo: BLC10G27XS-400AVTZ, Tape at Reel Packaging) Tagagawa: Ampleon Uri ng Produkto: 9th Generation 28V LDMOS Packaged Asymmetric Doherty RF Power Transistor (Na-optimize para sa...

BLC10G19XS-600AVT RF MOSFET LDMOS

HF/VHF Power LDMOS Ang BLC10G19XS-600AVT ay isang 10th‑generation LDMOS asymmetric Doherty power transistor ni Ampleon, na tumatakbo sa 1930～1995 MHz. Na-optimize para sa 4G/5G macro base station at mMIMO final power amplifier, naghahatid ito ng...

BLC10G19XS-551AV RF MOSFET LDMOS

HF/VHF Power LDMOS Ang BLC10G19XS-551AV ay isang 10th-generation silicon-based LDMOS RF power transistor na ginawa ng Ampleon (Netherlands), na na-optimize para sa mga asymmetric na Doherty power amplifier sa 4G LTE at 5G NR macro base station na...

BLC10G22XS-602AVT RF MOSFET LDMOS 30V SOT1258

VHF POWER LDMOS Ang BLC10G22XS-602AVT ay isang 10th-generation LDMOS RF power transistor na ginawa ng Ampleon (Netherlands), na na-optimize para sa 4G LTE at 5G NR macro base station multi-carrier application sa 2110–2170 MHz (2.1 GHz) band....

BLC10G18XS-602AVT RF MOSFET LDMOS

HF/VHF POWER LDMOS Ang BLC10G18XS-602AVT ay isang high-performance na LDMOS RF power transistor na ginawa ni Ampleon, na idinisenyo para sa mga macro base station application sa 1805–1880 MHz frequency range (1.8 GHz band). Naghahatid ito ng mataas...

BLC10G22XS-400AVT Power LDMOS Transistot

Power LDMOS Transistor Ang BLC10G22XS-400AVT ay isang asymmetric na Doherty LDMOS power transistor mula sa Ampleon, na na-optimize para sa 2110–2200MHz (2.2GHz) 4G/5G macro base station at multi-carrier RF power amplifier. Nakalagay sa isang pakete...