Lahat ng produkto

BLC9G21LS-60AVZ RF MOSFET LDMOS

Power LDMOS Transistor Ang BLC9G21LS-60AVZ ay isang dual N-channel na LDMOS RF power transistor batay sa Gen9 LDMOS na teknolohiya ng Ampleon, na na-optimize para sa 1805–2200MHz (1.8–2.2GHz) 4G/5G base station, multi-carrier communication system,...

RF MOSFET Transistors BLC10G27XS-551AVT

Power LDMOS Transistor Modelo: BLC10G27XS-551AVT Tagagawa: Ampleon Uri ng Produkto: 10th Generation 28V LDMOS Packaged Asymmetric Doherty Power Transistor, na-optimize para sa 2.62–2.69GHz 5G NR n78 band macro base station final-stage power...

BLC10G16XS-600AVT RF MOSFET LDMOS 32V

HF/VHF POWER LDMOS Numero ng Bahagi：BLC10G16XS-600AVT Tagagawa: Ampleon Uri ng Device：LDMOS, asymmetric Doherty power transistor, 1.427–1.518 GHz, 600W class, na nakatuon para sa macro base station RF final-stage amplification. Mga Pangunahing...

BLC10G18XS-360AVT RF MOSFET LDMOS

Power LDMOS Transistor Ang BLC10G18XS-360AVT ay isang asymmetric na Doherty LDMOS RF power transistor mula sa Ampleon, na na-optimize para sa 1805–1880MHz (1.8GHz) 4G/5G macro base station at multi-carrier power amplifier. Nakalagay sa isang...

RF MOSFET Transistors BLC10G27XS-400AVTZ

Power LDMOS Transistor Modelo: BLC10G27XS-400AVT (Karaniwang Modelo: BLC10G27XS-400AVTZ, Tape at Reel Packaging) Tagagawa: Ampleon Uri ng Produkto: 9th Generation 28V LDMOS Packaged Asymmetric Doherty RF Power Transistor (Na-optimize para sa...

BLC10G19XS-600AVT RF MOSFET LDMOS

HF/VHF Power LDMOS Ang BLC10G19XS-600AVT ay isang 10th‑generation LDMOS asymmetric Doherty power transistor ni Ampleon, na tumatakbo sa 1930～1995 MHz. Na-optimize para sa 4G/5G macro base station at mMIMO final power amplifier, naghahatid ito ng...

BLC10G19XS-551AV RF MOSFET LDMOS

HF/VHF Power LDMOS Ang BLC10G19XS-551AV ay isang 10th-generation silicon-based LDMOS RF power transistor na ginawa ng Ampleon (Netherlands), na na-optimize para sa mga asymmetric na Doherty power amplifier sa 4G LTE at 5G NR macro base station na...

BLC10G22XS-602AVT RF MOSFET LDMOS 30V SOT1258

VHF POWER LDMOS Ang BLC10G22XS-602AVT ay isang 10th-generation LDMOS RF power transistor na ginawa ng Ampleon (Netherlands), na na-optimize para sa 4G LTE at 5G NR macro base station multi-carrier application sa 2110–2170 MHz (2.1 GHz) band....

BLC10G18XS-602AVT RF MOSFET LDMOS

HF/VHF POWER LDMOS Ang BLC10G18XS-602AVT ay isang high-performance na LDMOS RF power transistor na ginawa ni Ampleon, na idinisenyo para sa mga macro base station application sa 1805–1880 MHz frequency range (1.8 GHz band). Naghahatid ito ng mataas...

BLC10G22XS-400AVT Power LDMOS Transistot

Power LDMOS Transistor Ang BLC10G22XS-400AVT ay isang asymmetric na Doherty LDMOS power transistor mula sa Ampleon, na na-optimize para sa 2110–2200MHz (2.2GHz) 4G/5G macro base station at multi-carrier RF power amplifier. Nakalagay sa isang pakete...

BLC10G22XS-603AVT RF MOSFET LDMOS 30V

HF/VHF POWER LDMOS Numero ng Bahagi：BLC10G22XS-603AVT（suffix Z/Y: BLC10G22XS-603AVTY） Tagagawa: Ampleon Uri ng Device：LDMOS, asymmetric Doherty power transistor, 2.11–2.17 GHz, 600 W peak power, na nakalaan para sa 5G NR/4G LTE macro base station RF...

BLF974P BLF974PU High Power LDMOS

BLF974P, Ampleon, 500W HF/VHF Broadband LDMOS RF Power Transistor, 50V Advanced na Teknolohiya ng LDMOS, 10kHz-700MHz Ultra-Wide Frequency Coverage, Broadcast/Industrial/Scientific/Medical (ISM) Dedicated High-Power High Power Component at MRFitch...

BLP9H10-30G RF MOSFET LDMOS

Numero ng Bahagi：BLP9H10-30G Tagagawa: Ampleon Uri ng Device：9th‑generation 50V LDMOS RF power transistor, 30W, plastic package, na-optimize para sa sub‑1GHz 4G/3G/2G base station driver o low‑power final amplifier. Mga Pangunahing Detalye Saklaw ng...

BLC10G22XS-301AVT RF MOSFET LDMOS DFM6

Pangkalahatang Paglalarawan Ang BLC10G22XS-301AVT ay isang 300W P1dB asymmetric Doherty LDMOS transistor mula sa 10th‑generation (GEN10) na proseso ng Ampleon, na tumatakbo sa 2110–2170MHz (5G n1/n66, 4G B1/B66). Nakalagay sa isang SOT1275-1...

GaN HEMT CLL3H0914L-700U AlGaN

Numero ng Bahagi：CLL3H0914L-700 Tagagawa: Ampleon Uri ng Device：L‑band, 700W GaN‑SiC HEMT (Gallium Nitride Silicon Carbide High Electron Mobility Transistor), internally pre-matched, 0.9–1.4 GHz, pulse radar / aerospace high-power final stage...

BLF188XR RF MOSFET LDMOS 50V CDFM4

Mga Produkto ng Application ng BLF188XR Ang BLF188XR ay isang 1400W LDMOS RF power transistor na ginawa ni Ampleon (dating NXP), na tumatakbo sa frequency range na HF ~ 600 MHz. Pangunahing inilalapat ito sa mga high-power na RF power amplifier para...

BLM9D1822-30B 9th-generation LDMOS AMPLEON

Ang BLM9D1822-30BZ ay isang 9th-generation LDMOS 2-stage integrated Doherty MMIC mula sa Ampleon (Netherlands), na na-optimize para sa 4G/5G small cell, macro base station driver stages, at pangkalahatang RF amplification sa 1.8–2.2 GHz band....

BLM8G0710S-15PB 2 stage dual section power MMIC

Numero ng Bahagi：BLM8G0710S-15PB Tagagawa: Ampleon Uri ng Device：8th‑generation LDMOS, 2‑stage / dual‑section power MMIC, 700–1000 MHz sub‑1GHz, 15W‑class general-purpose driver / small cell final amplifier. Mga Pangunahing Detalye (Tcase=25°C,...

B11G1822N60DXZ AMPLEON MMIC LDMOS

Numero ng Bahagi：B11G1822N60D Tagagawa: Ampleon Uri ng Device：LDMOS, dual-section 2‑stage fully integrated Doherty MMIC, 1.8–2.2 GHz, 60 W linear power, macro base station / 5G mMIMO general-purpose driver amplifierAmpleon. Mga Pangunahing Detalye...

C4H18W500A RF MOSFET 48V SOT1273

Numero ng Bahagi：C4H18W500A Tagagawa: Ampleon Uri ng Device：Gallium Nitride（GaN）HEMT, 48V asymmetric Doherty RF power transistor Application：Panghuling power amplifier para sa 4G / 5G macro base station AAU & RRU, 1800～2000 MHz Mga Pangunahing...

BLC10G15XS-301AVT RF MOSFET LDMOS 30V

Numero ng Bahagi：BLC10G15XS-301AVT Tagagawa: Ampleon Uri ng Device：10th-generation LDMOS, 30V asymmetric Doherty RF power transistor Frequency Band：1452～1492 MHz（5G n5 / 4G B5 band） Application：Final power amplifier para sa 4G/5G macro base station...

BLC9H10XS-606AZ RF MOSFET LDMOS 48V

Bilang ng Bahagi : BLC9H10XS-606A Tagagawa : Ampleon Uri ng Device : 9th-generation 48V LDMOS RF power transistor, asymmetric na disenyo ng Doherty na may pinagsamang input matching, na-optimize para sa sub-1GHz 4G/5G base station final power...

ART1K9FH ART1K9FHU peak power LDMOS RF transistor

Ang ART1K9FHU ay isang 1900 W peak power LDMOS RF transistor na ginawa ng Ampleon batay sa Advanced Rugged Technology (ART). Ito ay partikular na idinisenyo para sa 1 MHz–500 MHz (mababang frequency sa VHF band) ISM, broadcast at mga aplikasyon ng...

BLF989E RF MOSFET Transistors

Ang BLF989E ay isang 1000 W peak power LDMOS RF transistor na ginawa ni Ampleon, na gumagamit ng 9th generation high-voltage (50V) LDMOS process technology. Ito ay partikular na idinisenyo para sa 400–860 MHz (UHF band) asymmetrical broadcast...